Datasheet4U Logo Datasheet4U.com

4N60K - 40A 600V N-CHANNEL POWER MOSFET

General Description

The UTC 4N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) < 2.5Ω @VGS = 10 V.
  • Ultra Low Gate Charge ( typical 15 nC ).
  • Low Reverse Transfer.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
4N60 4A 600V N-channel Enhancement Mode Power MOSFET ROUM
4N60 Power MOSFET Zibo Seno
4N60 N-CHANNEL MOSFET KIA
4N60 N-CHANNEL POWER MOSFET UTC
4N60 N-Channel Power MOSFET nELL

Other Datasheets by Unisonic Technologies

Part Number Description
4N60K-MK N-CHANNEL POWER MOSFET
4N60K-MT N-CHANNEL POWER MOSFET
4N60-C N-CHANNEL POWER MOSFET
4N60-E N-CHANNEL POWER MOSFET
4N60-N N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 4N60K 4.0A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co.