| Part Number | 4N60F Datasheet |
|---|---|
| Manufacturer | GFD |
| Overview |
This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteri.
* 4A, 600V, RDS(on) = 2.5Ω @VGS = 10 V * Low gate charge ( typical 16nC) * Fast switching * 100% avalanche tested * Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 4N60/4N60F TO-220/220F 0GFD www.goford.cn TEL：0755-86350980 FAX：0755-86350963 4N60/4N60F Absolute Maximum R. |
4N60F Datasheet PDF
The 4N60F is a 600V N-Channel MOSFET.
| Part Number | 4N60F Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Nell Power Semiconductor |
| Overview | The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage o. RDS(ON) = 2.5Ω@VGS = 10V Ultra low gate charge(20nC max.) Low reverse transfer capacitance (CRSS = 8pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G DS TO-251 (I-PAK) (4N60F) D D G S TO-252 (D-PAK) (4N60G) GDS TO-220AB. |
| Part Number | 4N60F Datasheet |
|---|---|
| Description | Surface Mount N-Channel Power MOSFET |
| Manufacturer | WEITRON |
| Overview | The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara. 2 DRAIN * * RDS(ON) =2.5 Ohms @VGS Ultra low gate charge =10V * Low reverse transfer Capacitance 1 GATE * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness 3 SOURCE DRAIN CURRENT 4 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE D-PAK3/(TO-251) . |