Fairchild Semiconductor 4N60B
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.| Part No. | 4N60B |
|---|---|
| Datasheet | 4N60B Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | 600V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.FEATURES
●●
●
●
●
●
● 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6) D G G DS TO-220 SSP Series GD S TO-220F SSS Series S
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) SSP4N60B 600 4.0 2.5 16 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) SSS4N60B 4.0 * 2.5 * 16 * 240 4.0 10 5.5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Ope...
