SW1N60E Description
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Value TO-251 TO-92 600 1.0 0.63.
SW1N60E Key Features
- High ruggedness
- Low RDS(ON) (Typ7.3Ω)@VGS=10V
- Low Gate Charge (Typ3.7nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application:Charge,Adaptor,LED