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SW1N60E - N-channel Enhanced mode TO-92/TO-251 MOSFET

Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • TO-92 TO-251.
  • High ruggedness.
  • Low RDS(ON) (Typ7.3Ω)@VGS=10V.
  • Low Gate Charge (Typ3.7nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet preview – SW1N60E

Datasheet Details

Part number SW1N60E
Manufacturer SEMIPOWER
File Size 684.67 KB
Description N-channel Enhanced mode TO-92/TO-251 MOSFET
Datasheet download datasheet SW1N60E Datasheet
Additional preview pages of the SW1N60E datasheet.

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Full PDF Text Transcription

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SW1N60E N-channel Enhanced mode TO-92/TO-251 MOSFET Features TO-92 TO-251  High ruggedness  Low RDS(ON) (Typ7.3Ω)@VGS=10V  Low Gate Charge (Typ3.7nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Charge,Adaptor,LED 12 3 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 600V ID : 1A RDS(ON) : 7.
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