SW1N55D Key Features
- High ruggedness
- RDS(ON) (Max6.5Ω)@VGS=10V
- Gate Charge (Typical 7nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Part: SW1N55D
- Manufacturer: SEMIPOWER
- Size: 499.54 KB
Related SEMIPOWER Datasheets
| Part Number | Description |
|---|---|
| SW1N60 | MOSFET |
| SW1N60A | MOSFET |
| SW1N60D | MOSFET |
| SW1N60E | N-channel Enhanced mode TO-92/TO-251 MOSFET |
| SW1N60L | MOSFET |
SW1N55D Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.