SEMIPOWER SW1N55D
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.| Part No. | SW1N55D |
|---|---|
| Datasheet | SW1N55D Download |
| Manufacturer |  SEMIPOWER |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
TO-251● High ruggedness
● RDS(ON) (Max6.5Ω)@VGS=10V
● Gate Charge (Typical 7nC)
● Improved dv/dt Capability
● 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source
GENERAL DESCRIPTION
This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 550V ID : 1A RDS(ON) :6.5Ω 2 1 3 Order Codes Item 1 Sales Type SW I 1N55 Marking SW1N55D Package TO-251 Packaging TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed (note 1) Gate to Source Voltage Single p
