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SW1N55D - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • TO-251.
  • High ruggedness.
  • RDS(ON) (Max6.5Ω)@VGS=10V.
  • Gate Charge (Typical 7nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General.

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Datasheet preview – SW1N55D

Datasheet Details

Part number SW1N55D
Manufacturer SEMIPOWER
File Size 499.54 KB
Description MOSFET
Datasheet download datasheet SW1N55D Datasheet
Additional preview pages of the SW1N55D datasheet.

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Full PDF Text Transcription

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SAMWIN SW1N55D N-channel IPAK MOSFET Features TO-251 ■ High ruggedness ■ RDS(ON) (Max6.5Ω)@VGS=10V ■ Gate Charge (Typical 7nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 550V ID : 1A RDS(ON) :6.
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