SEMIPOWER SW1N60A
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.FEATURES
● High ruggedness● RDS(ON) (Max 15 Ω)@VGS=10V
● Gate Charge (Max 6nC)
● Improved dv/dt Capability
● 100% Avalanche Tested TO-92 12 3 1. Gate 2. Drain 3. Source
GENERAL DESCRIPTION
This power MOSFET is usually used at AC adaptors and SMPS. BVDSS : 600V ID : 0.5A RDS(ON) : 15ohm 2 1 3 Order Codes Item 1 Sales Type SW C 1N60A Marking SW1N60A Package TO-92 Packaging TAPE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recover