SW1N60A - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

High ruggedness.
RDS(ON) (Max 15 Ω)@VGS=10V.
Gate Charge (Max 6nC).
Improved dv/dt Capability.
100% Avalanche Tested TO-92 12 3 1. Gate 2. Drain 3. Source General.

SEMIPOWER

📥 Download Datasheet

Datasheet Details

Part number	SW1N60A
Manufacturer	SEMIPOWER
File Size	675.35 KB
Description	MOSFET
Datasheet	SW1N60A Datasheet
Additional preview pages of the SW1N60A datasheet.

📁 Similar Datasheet

SW1N60A - SSW1N60A (Fairchild Semiconductor)
SW1N60C - N-channel D-PAK/I-PAK/TO-92 MOSFET (SAMWIN)
SW1 - 1W High Isolation 3kVdc Surface Mount DC-DC Converter (Superworld Electronics)
SW10-0312 - GaAs SPDT Reflective Switch (Tyco)
SW10-0313 - Matched GaAs SPDT Switch (Tyco)
SW100N03 - N-channel MOSFET (SAMWIN)
SW104 - IC SW104 (ETC)
SW105D05EHISMF - 1W High Isolation 3kVdc Surface Mount DC-DC Converter (Superworld Electronics)
SW105D12EHISMF - 1W High Isolation 3kVdc Surface Mount DC-DC Converter (Superworld Electronics)
SW105D15EHISMF - 1W High Isolation 3kVdc Surface Mount DC-DC Converter (Superworld Electronics)

Other Datasheets by SEMIPOWER

SW1N60 - MOSFET
SW1N60D - MOSFET
SW1N60E - N-channel Enhanced mode TO-92/TO-251 MOSFET
SW1N60L - MOSFET
SW1N55D - MOSFET
SW1N70A - MOSFET
SW1N70C - MOSFET
SW1N80A - MOSFET

Full PDF Text Transcription

Click to expand full text

SAMWIN SW1N60A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-92 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors and SMPS. BVDSS : 600V ID : 0.

Published: Apr 20, 2017 |