SAMWIN SW1N60A N-channel MOSFET Features ■ Hi.
SW1N60A - SSW1N60A
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω I.SW1N60A - MOSFET
SAMWIN SW1N60A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% .SSW1N60A - Advanced Power MOSFET
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.