SSW1N60A - Advanced Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	SSW1N60A
Manufacturer	Fairchild Semiconductor
File Size	628.95 KB
Description	Advanced Power MOSFET
Datasheet	SSW1N60A Datasheet
Additional preview pages of the SSW1N60A datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ. ) SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 1 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Dr.

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Published: Jan 3, 2006 |