SSW1N60A
SSW1N60A is manufactured by Fairchild Semiconductor.
Advanced Power MOSFET
Features
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ.)
SSW/I1N60A
BVDSS = 600 V RDS(on) = 12 Ω ID = 1 A
D2-PAK
I2-PAK
1 1 3 2 3
1. Gate 2. Drain 3....
