SSW2N80A
SSW2N80A is manufactured by Fairchild Semiconductor.
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Advanced Power MOSFET
Features
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 4.688 Ω (Typ.)
SSW/I2N80A
BVDSS = 800 V RDS(on) = 6.0 Ω ID = 2 A
D2-PAK
I2-PAK
1 1 3 2 3
1. Gate 2. Drain 3....
