SEMIPOWER SW1N60L
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.| Part No. | SW1N60L |
|---|---|
| Datasheet | SW1N60L Download |
| Manufacturer |  SEMIPOWER |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
● High ruggedness● RDS(ON) (Max 23 Ω)@VGS=10V
● Gate Charge (Max 4.5nC)
● Improved dv/dt Capability
● 100% Avalanche Tested TO-92 1 2 3 1. Gate 2. Drain 3. Source
GENERAL DESCRIPTION
This power MOSFET is usually used at AC adaptors and SMPS. BVDSS : 600V ID : 0.3A RDS(ON) : 23ohm 2 1 3 Order Codes Item 1 Sales Type SW C 1N60L Marking SW1N60L Package TO-92 Packaging TAPE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Reco
