• Part: SW1N60D
  • Manufacturer: SEMIPOWER
  • Size: 623.50 KB
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SW1N60D datasheet preview
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SW1N60D Key Features

  • High ruggedness
  • RDS(ON) (Max8.5Ω)@VGS=10V
  • Gate Charge (Typical 6.8 nC)
  • Improved dv/dt Capability
  • 100% Avalanche Tested

Other SW1N60D Datasheets

Manufacturer Part Number Description
Fairchild Semiconductor Logo Fairchild SW1N60A SSW1N60A
SAMWIN Logo SAMWIN SW1N60C N-channel D-PAK/I-PAK/TO-92 MOSFET

SW1N60D Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.