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SW1N60D - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • TO-251 TO-92.
  • High ruggedness.
  • RDS(ON) (Max8.5Ω)@VGS=10V.
  • Gate Charge (Typical 6.8 nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 1 2 3 12 3 1. Gate 2. Drain 3. Source General.

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Datasheet preview – SW1N60D

Datasheet Details

Part number SW1N60D
Manufacturer SEMIPOWER
File Size 623.50 KB
Description MOSFET
Datasheet download datasheet SW1N60D Datasheet
Additional preview pages of the SW1N60D datasheet.

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Full PDF Text Transcription

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SAMWIN SW1N60D N-channel I-PAK/TO-92 MOSFET Features TO-251 TO-92 ■ High ruggedness ■ RDS(ON) (Max8.5Ω)@VGS=10V ■ Gate Charge (Typical 6.8 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 2 3 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 600V ID : 1A RDS(ON) :8.
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