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SW1N60 - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 12 Ω)@VGS=10V.
  • Gate Charge (Max 6nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-251 TO-252 TO-126 12 3 12 3 12 3 1. Gate 2. Drain 3. Source General.

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Datasheet preview – SW1N60

Datasheet Details

Part number SW1N60
Manufacturer SEMIPOWER
File Size 690.92 KB
Description MOSFET
Datasheet download datasheet SW1N60 Datasheet
Additional preview pages of the SW1N60 datasheet.

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Full PDF Text Transcription

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SAMWIN SW1N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 12 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-251 TO-252 TO-126 12 3 12 3 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 600V ID : 1.
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