SAMWIN SW1N60 N-channel MOSFET Features ■ Hig.
Fairchild Semiconductor
SW1N60A - SSW1N60A
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω I.
SAMWIN
SW1N60C - N-channel D-PAK/I-PAK/TO-92 MOSFET
SAMWIN SW1N60C N-channel D-PAK/I-PAK/TO-92 MOSFET Features TO-251 TO-252 TO-92 ■ High ruggedness ■ RDS(ON) (Max 9 Ω)@VGS=10V ■ Gate Charge (Typ.
SEMIPOWER
SW1N60A - MOSFET
SAMWIN SW1N60A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% .
SEMIPOWER
SW1N60D - MOSFET
SAMWIN SW1N60D N-channel I-PAK/TO-92 MOSFET Features TO-251 TO-92 ■ High ruggedness ■ RDS(ON) (Max8.5Ω)@VGS=10V ■ Gate Charge (Typical 6.8 nC) ■.
SEMIPOWER
SW1N60L - MOSFET
SAMWIN SW1N60L N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 23 Ω)@VGS=10V ■ Gate Charge (Max 4.5nC) ■ Improved dv/dt Capability ■ 100.
Fairchild Semiconductor
SSW1N60B - 600V N-Channel MOSFET
SSW1N60B / SSI1N60B November 2001 SSW1N60B / SSI1N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .
Fairchild Semiconductor
SSW1N60A - Advanced Power MOSFET
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
SEMIPOWER
SW1N60E - N-channel Enhanced mode TO-92/TO-251 MOSFET
SW1N60E N-channel Enhanced mode TO-92/TO-251 MOSFET Features TO-92 TO-251 High ruggedness Low RDS(ON) (Typ7.3Ω)@VGS=10V Low Gate Charge (Ty.
SEMIPOWER
SW1N60 - MOSFET
SAMWIN SW1N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 12 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% A.
