HXB15H1G160CF Datasheet - SCSemicon

HXB15H1G160CF 1-Gbit Double-Date-Rate-Three SDRAM

The 1-Gbit DDR3 DRAM is a high-speed Double-Data-RateTwo CMOS Synchronous DRAM device containing 1,073,741,824 bits and internally configured as an octal bank DRAM. The 1-Gbit device is organized as 8 Mbit ×16 I/O ×8 banks or 16 Mbit ×8 I/O ×8 banks. These synchronous devices achieve high speed tra.

July 2014 HXB15H1G800CF HXB15H1G160CF 1-Gbit Double-Date-Rate-Three SDRAM DDR3 SDRAM EU RoHS HF Compliant Products Data Sheet Rev. 1 Revision History: Rev. 1, 2014-07 Initial version Data Sheet HXB15H1G(80/16)0CF 1-Gbit Double-Data-Rate-Three SDRAM We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to .

HXB15H1G160CF Features

* The 1-Gbit Double-Data-Rate-Three SDRAM offers the following key features:

* 1.5 V ±0.075 V Power Supply

* Off-Chip-Driver impedance adjustment (OCD) and 1.5 V ±0.075 V (SSTL_15) compatible I/O

* DRAM organizations with 8/16 data in/outputs

* Double Data Rate arch

HXB15H1G160CF Datasheet (821.38 KB)