BUX65
SEME-LAB
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Bipolar npn device.
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BUX60 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for .
BUX60 - Bipolar NPN Device
(Seme LAB)
..
BUX60
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar NPN D.
BUX61 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for .
BUX62 - SILICON NPN BIPOLAR TRANSISTOR
(TT)
SILICON NPN BIPOLAR TRANSISTOR
BUX62
• Hermetic TO66 Metal Package • Designed For Driver Circuits, Switching
and Amplifier Applications • Screening Op.
BUX62 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for .
BUX63 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
:VCEO(SUS)= 325V(Min.) ·Fast Switching Speed ·High Reliabili.
BUX63 - Bipolar NPN Device
(Semelab)
BUX63
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar NPN Device in a Hermetical.
BUX64 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
:VCEO(SUS)= 400V(Min.) ·Fast Switching Speed ·High Reliabili.
BUX65 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
:VCEO(SUS)= 500V(Min.) ·Fast Switching Speed ·High Reliabili.
BUX66 - Bipolar PNP Device
(Seme LAB)
BUX66
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar PNP Device in a Hermetical.
