BUX66B Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistors BUX66B/C .
Contunuous Collector Current-IC= -2A. Power Dissipation-PD= 35W @TC= 25℃. Collector-Emitter Saturation Voltage- : VCE(sat)= -2.

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Datasheet Specifications

Part number: BUX66B
Manufacturer: Inchange Semiconductor
File Size: 209.95 KB
Datasheet: BUX66B-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage BUX66B BUX66C VCEO

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BUX66B Silicon NPN Power Transistor Inchange Semiconductor

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