BUX66C, BUX66B Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistors BUX66B/C .
Contunuous Collector Current-IC= -2A. Power Dissipation-PD= 35W @TC= 25℃. Collector-Emitter Saturation Voltage- : VCE(sat)= -2.

📥 Download Datasheet

BUX66C Datasheet Preview — This datasheet PDF includes multiple part numbers: BUX66C, BUX66B. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: BUX66C, BUX66B
Manufacturer: Inchange Semiconductor
File Size: 209.95 KB
Datasheet: BUX66B-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor
Note: This datasheet PDF includes multiple part numbers: BUX66C, BUX66B.
Please refer to the document for exact specifications by model.

Applications

* Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage BUX66B BUX66C VCEO

BUX66C Distributors

📁 Related Datasheet

BUX66 BUX66A BUX60 BUX61 BUX62 BUX63

📌 All Tags

BUX66B Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor BUX66C-like datasheet