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SW12N65B - N-channel TO-220F MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 0.85 Ω)@VGS=10V.
  • Gate Charge (Typical 28nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested BVDSS : 650V ID : 12.0A RDS(ON) : 0.85ohm 1 2 3 1 2 1. Gate 2. Drain 3. Source General.

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Datasheet preview – SW12N65B

Datasheet Details

Part number SW12N65B
Manufacturer SEMIPOWER
File Size 412.75 KB
Description N-channel TO-220F MOSFET
Datasheet download datasheet SW12N65B Datasheet
Additional preview pages of the SW12N65B datasheet.

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Full PDF Text Transcription

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SAMWIN TO-220F SW12N65B N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.85 Ω)@VGS=10V ■ Gate Charge (Typical 28nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested BVDSS : 650V ID : 12.0A RDS(ON) : 0.85ohm 1 2 3 1 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
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