SW12N65B - N-channel TO-220F MOSFET

SEMIPOWER

Datasheet Details

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

High ruggedness.
RDS(ON) (Max 0.85 Ω)@VGS=10V.
Gate Charge (Typical 28nC).
Improved dv/dt Capability.
100% Avalanche Tested BVDSS : 650V ID : 12.0A RDS(ON) : 0.85ohm 1 2 3 1 2 1. Gate 2. Drain 3. Source General.

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Published: May 5, 2014 |