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SW12N65 - N-channel MOSFET

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

  • High ruggedness.
  • RDS(ON) (Max 0.8 Ω)@VGS=10V.
  • Gate Charge (Typ 47nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 2 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW12N65
Manufacturer SAMWIN
File Size 1.24 MB
Description N-channel MOSFET
Datasheet download datasheet SW12N65 Datasheet

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Other Datasheets by SAMWIN

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SAMWIN TO-220F TO-220 SW12N6 5 N-channel MOSFET BVDSS : 650V ID : 12.0A RDS(ON) : 0.8ohm 1 1 3 2 2 3 1 3 Features ■ High ruggedness ■ RDS(ON) (Max 0.8 Ω)@VGS=10V ■ Gate Charge (Typ 47nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.