2SA1797U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pw = 20 ms) Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol Value Unit -VCBO 50 V -VCEO 50 V -VEBO 6 V -IC 2 A -ICP 3 A PC 0.5 W Tj 150 ℃ Tstg - 55 to + 150 ℃ Characteristics at Ta = 25℃ Parameter DC Current Ga.