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MPSA63 / 64
PNP Silicon Epitaxial Planar Transistor
Darlington Transistor for high gain amplification
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
DC Current Gain at -VCE = 5 V, -IC = 10 mA
at -VCE = 5 V, -IC = 100 mA
Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 10 V Collector Emitter Breakdown Voltage at -IC = 100 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 100 µA Base Emitter On Voltage at -VCE = 5 V, -IC = 100 mA Transition Frequency at -VCE = 5 V, IE = 10 mA
1. Emitter 2. Base 3. Collector TO-92 Plastic Package Weight approx. 0.
MPSA63 Datasheet
