f'- f ~ INTEGRATED CIRCUIT r M 2316E f16384 BIT READ ONLY MEMORY t- SINGLE +5V ± 10% POWER SUPPLY lit ACCESS TIME 450 ns (MAX.) f.iii INPUTS AND OUTPUTS TTL COMPATIBLE THREE PROGRAMMABLE CHIP SELECTS FOR SIMPLE MEMORY EXPANSION AND SYSTEM .
INTERFACE ~ COMPLETLY STATIC OPERATION l THREE-STATE OUTPUT FOR DIRECT BUS INTERFACE ~ 'The M 2316E is a 16384 bit static Read Only Memory N-channel Si-Gate MOS organized as 2048 words ;by 8 bits.
Its high bit density is ideal for large, non-volatile d
