S90N045S Datasheet, Mosfet, SI-TECH

S90N045S Features

• Mosfet █ 90V,150A,Rds(on)(typ)=4.5mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability █ Split-Gate MOS Technology General Description This Power

PDF File Details

Part number:

S90N045S

Manufacturer:

SI-TECH

File Size:

554.20kb

Download:

📄 Datasheet

Description:

N-channel mosfet. This Power MOSFET is produced using Si-Tech’s advanced Split-Gate MOS Technology. This latest technology has been especially designed

TAGS

S90N045S

SI-TECH

📁 Related Datasheet

S90N045R - N-Channel MOSFET (SI-TECH)
SI-TECH SEMICONDUCTOR CO.,LTD S90N045R/S N-Channel MOSFET Features █ 90V,150A,Rds(on)(typ)=4.5mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% .

S90N040R - N-Channel MOSFET (SI-TECH)
SI-TECH SEMICONDUCTOR CO.,LTD S90N040R/S N-Channel MOSFET Features █ 90V,170A,Rds(on)(typ)=4mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Av.

S90N040S - N-Channel MOSFET (SI-TECH)
SI-TECH SEMICONDUCTOR CO.,LTD S90N040R/S N-Channel MOSFET Features █ 90V,170A,Rds(on)(typ)=4mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Av.

S90N030R - N-Channel MOSFET (SI-TECH)
SI-TECH SEMICONDUCTOR CO.,LTD S90N030R/S N-Channel MOSFET Features █ 90V,190A,Rds(on)(typ)=3mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Av.

S90N030S - N-Channel MOSFET (SI-TECH)
SI-TECH SEMICONDUCTOR CO.,LTD S90N030R/S N-Channel MOSFET Features █ 90V,190A,Rds(on)(typ)=3mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Av.

S90N055R - N-Channel MOSFET (SI-TECH)
SI-TECH SEMICONDUCTOR CO.,LTD S90N055R/S N-Channel MOSFET Features █ 90V,130A,Rds(on)(typ)=5.5mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% .

S90N055S - N-Channel MOSFET (SI-TECH)
SI-TECH SEMICONDUCTOR CO.,LTD S90N055R/S N-Channel MOSFET Features █ 90V,130A,Rds(on)(typ)=5.5mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% .

S9004P2CT - 30A SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
S9004P2CT 30A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power L.

S9005P2CT - 20A SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
S9005P2CT 20A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power L.

S9011 - NPN Transistor (WEJ)
RoHS S9011 S9011 F EATURE Pow er dissipation P CM: TRANSISTOR (NPN) TO-92 1 . EMITTER 2. BASE 0 .31 W (Tamb=25℃) 3. COLLECTOR Co llector curren.