Description
This Power MOSFET is produced using Sourcesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics.
Features
- 4.5A,600v,RDS(on)=2.5Ω@VGS=10V.
- Gate charge (Typical 27nC).
- High ruggedness.
- Fast switching.
- 100% AvalancheTested.
- Improved dv/dt capability
SSP5N60/SSF5N60C
General.
