* Rugged construction with polysilicon gate Low RDS (on) and high transconductance Excellent high temperature stability Very fast switching speed Fast recovery and superior dv/dt performance Increased reverse energy capability Low input and transfer capacitance for easy paralleling He
SFF50N20M Datasheet (100.67 KB)
SFF50N20M
SSDI
100.67 KB
N-channel power mosfet.
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