SFT8600S.22 Datasheet (SSDI) - 1 AMP NPN Transistor

SFT8600S.22, 1 AMP NPN Transistor

Solid State Devices, Inc.

14701 Firestone Blvd La Mirada, CA 90638 Phone: (562) 404-4474 Fax: (562) 404-1773 ssdi@ssdi-power.com www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT8600 __ __ │ └ Screening 2/ │ __ = No Screening │ TX = TX Level │ TXV = TXV Level │ S = S Level │ │ │ └ Package S.22 = SMD.22 S.5 = SMD.5 Maximum Ratings3/ Collector Emitter Voltage Collector Emitter Voltage (RBE = 1KΩ) Collector Base Voltag

SFT8600S.22 Features

* BVCEO minimum 400 volts

* Very low saturation voltage

* Very low leakage

* High gain from 20 mA to 250 mA

* 200°C operating temperature

* Gold eutectic die attach

* Superior performance over JEDEC 2N5010-2N50