SST29EE512 Datasheet (SST) - 512 Kilobit (64K x8) Page-Mode EEPROM

SST29EE512, 512 Kilobit (64K x8) Page-Mode EEPROM

The SST29EE512/29LE512/29VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

The S

SST29EE512 Features

* Single Voltage Read and Write Operations

* 5.0V-only for SST29EE512

* 3.0-3.6V for SST29LE512

* 2.7-3.6V for SST29VE512

* Superior Reliability

* Endurance: 100,000 Cycles (typical)

* Greater than 100 years Data Retention

* Low Power