Part number:
B9NK70Z-1, B9NK70Z
Manufacturer:
File Size:
660.83 KB
Description:
N-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: B9NK70Z-1, B9NK70Z.
Please refer to the document for exact specifications by model.
B9NK70Z-STMicroelectronics.pdf
Datasheet Details
Part number:
B9NK70Z-1, B9NK70Z
Manufacturer:
File Size:
660.83 KB
Description:
N-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: B9NK70Z-1, B9NK70Z.
Please refer to the document for exact specifications by model.
B9NK70Z-1, B9NK70Z, N-channel MOSFET
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements
STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z 700 V 700 V 700 V 700 V 700 V < 1.2 Ω < 1.2 Ω < 1.2 Ω < 1.2 Ω < 1.2 Ω 7.5 A 7.5 A 7.5 A 7.5 A 7.5 A 115 W 35 W 115 W 115 W 156 W s TYPICAL RDS(on) = 1.0 Ω s EXTREMELY HIGH dv/dt CAPABILITY s IMPROVED ESD CAPABILITY s 100% AVALANCHE RATED s GATE CHARGE MINIM
B9NK70Z-1 Features
* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltag
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