B9NK70Z-1, B9NK70Z Datasheet - ST Microelectronics

B9NK70Z-1 N-channel MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements .

STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z 700 V 700 V 700 V 700 V 700 V < 1.2 Ω < 1.2 Ω < 1.2 Ω < 1.2 Ω < 1.2 Ω 7.5 A 7.5 A 7.5 A 7.5 A 7.5 A 115 W 35 W 115 W 115 W 156 W s TYPICAL RDS(on) = 1.0 Ω s EXTREMELY HIGH dv/dt CAPABILITY s IMPROVED ESD CAPABILITY s 100% AVALANCHE RATED s GATE CHARGE MINIM.

B9NK70Z-1 Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltag

B9NK70Z-STMicroelectronics.pdf