B9NB50 Datasheet - STMicroelectronics

B9NB50 N-Channel MOSFET

STB9NB50 N - CHANNEL ENHANCEMENT MODE Power MESH™ MOSFET TYPE ST B9NB50 VDSS 500 V RDS(on) < 0.85 Ω ID 8.6 A s TYPICAL RDS(on) = 0.75 Ω s EXTREMELY HIGH dv/dt CAPABILITY s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s VERY LOW INTRINSIC CAPACITANCE s GATE CHARGE MINIMIZED s LOW LEAKAGE CURRENT s APPLICATION ORIENTED CHARACTERIZATION s FOR SMD D2PAK VERSION CONTACT SALES OFFICE APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER.

B9NB50-STMicroelectronics.pdf