BUV18
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Npn high current switching transistors.
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BUV10 - Silicon NPN Power Transistor
(Inchange Semiconductor)
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isc Product Specification
isc Silicon NPN Power Transistor
BUV10
DESCRIPTION ·High Switching Speed ·Hi.
BUV10N - Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
(Seme LAB)
BUV10N
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
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BUV11 - 20 AMPERES NPN SILICON POWER METAL TRANSISTOR
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Order this document by BUV11/D
SWITCHMODE Series NPN Silicon Power Transistor
. . . designed for high current.
BUV11 - SITCHMODE Series NPN Silicon Power Transistor
(ON Semiconductor)
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Order this document by BUV11/D
SWITCHMODE Series NPN Silicon Power Transistor
. . . designed for high current.
BUV12 - Bipolar NPN Device
(Seme LAB)
BUV12
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN .
BUV12 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.6V (Max.) @IC= 6A ·High Switching Speed ·High DC Curren.
BUV18 - NPN HIGH CURENT SWITCHING TRANSISTORS
(Seme LAB)
BUV18 BUV19
MECHANICAL DATA Dimensions in mm
NPN HIGH CURENT SWITCHING TRANSISTORS
25.15 (0.99) 26.67 (1.05)
10.67 (0.42) 11.18 (0.44)
6.35 (0.25).
BUV18 - Silicon NPN Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV18
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.
BUV18X - Bipolar NPN Device
(Seme LAB)
BUV18X
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
BUV19 - NPN HIGH CURENT SWITCHING TRANSISTORS
(Seme LAB)
BUV18 BUV19
MECHANICAL DATA Dimensions in mm
NPN HIGH CURENT SWITCHING TRANSISTORS
25.15 (0.99) 26.67 (1.05)
10.67 (0.42) 11.18 (0.44)
6.35 (0.25).
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