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BUV10 - Silicon NPN Power Transistor

BUV10 Description

www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV10 .
High Switching Speed. High Current Capability APPLICATIONS. Designed for high current,high speed,high power applications.

BUV10 Applications

* Designed for high current,high speed,high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEX VCER VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage Emitter-Base Voltage C

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Datasheet Details

Part number
BUV10
Manufacturer
Inchange Semiconductor
File Size
111.10 KB
Datasheet
BUV10_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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📌 All Tags

Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BUV10-like datasheet