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BUV10 Datasheet - Inchange Semiconductor

Silicon NPN Power Transistor

BUV10 General Description

*High Switching Speed *High Current Capability APPLICATIONS *Designed for high current,high speed,high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEX VCER VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitt.

BUV10 Datasheet (111.10 KB)

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Datasheet Details

Part number:

BUV10

Manufacturer:

Inchange Semiconductor

File Size:

111.10 KB

Description:

Silicon npn power transistor.

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BUV10 Silicon NPN Power Transistor Inchange Semiconductor

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