BUV10 Datasheet - Inchange Semiconductor

BUV10, Silicon NPN Power Transistor

www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV10 .
High Switching Speed. High Current Capability APPLICATIONS. Designed for high current,high speed,high power applications.

Applications

* Designed for high current,high speed,high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEX VCER VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage Emitter-Base Voltage C

BUV10_InchangeSemiconductor.pdf