BUV10 Silicon NPN Power Transistor

Inchange Semiconductor

Description

www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV10 .
High Switching Speed. High Current Capability APPLICATIONS. Designed for high current,high speed,high power applications.

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BUV10 Datasheet Preview — Preview of BUV10 PDF

Datasheet Specifications

Part number: BUV10
Manufacturer: Inchange Semiconductor
File Size: 111.10 KB
Datasheet: BUV10_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for high current,high speed,high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEX VCER VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage Emitter-Base Voltage C

BUV10 Distributors

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BUV10 Silicon NPN Power Transistor Inchange Semiconductor

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