BUV24 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Low Collector Saturation Voltage- : VCE(sat)= 0. High Power Dissipation. Collector-Emitter Sustaining Voltage- : VCEO(SU.

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Datasheet Specifications

Part number: BUV24
Manufacturer: Inchange Semiconductor
File Size: 208.89 KB
Datasheet: BUV24-INCHANGESemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in power switching applications in military and industrial equipments. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCER VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VEBO Emi

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BUV24 Silicon NPN Power Transistor Inchange Semiconductor

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