BUV22 Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUV22 .
Low Collector Saturation Voltage- : VCE(sat)= 1. High Switching Speed. High DC Current Gain- : hFE= 20(Min.

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Datasheet Specifications

Part number: BUV22
Manufacturer: Inchange Semiconductor
File Size: 188.47 KB
Datasheet: BUV22-INCHANGESemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCER VCEX VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage IC Coll

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BUV22 Silicon NPN Power Transistor Inchange Semiconductor

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