M29W400T Datasheet - ST Microelectronics

M29W400T 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory

The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byteor Wordby-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devic.

M29W400T M29W400B 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 90ns FAST PROGRAMMING TIME 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by-Byte or Word-by-Word Status Register bits and Ready/Busy Output MEMORY BL.

M29W400T Features

* d fifth cycles are used to input Coded cycles to the C.I. This Coded sequence is the same for all Program/Erase Controller instructions. The ’Com

M29W400T Datasheet (245.97 KB)

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Datasheet Details

Part number:

M29W400T

Manufacturer:

STMicroelectronics ↗

File Size:

245.97 KB

Description:

4 mbit 512kb x8 or 256kb x16 / boot block low voltage single supply flash memory.

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M29W400T Mbit 512Kb 256Kb x16 Boot Block Low Voltage Single Supply Flash Memory ST Microelectronics

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