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M58BW16F - (M58BW16F / M58BW32F) Flash memories

ST Microelectronics

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Datasheet Details

Part number	M58BW16F
Manufacturer	STMicroelectronics
File Size	655.78 KB
Description	(M58BW16F / M58BW32F) Flash memories
Datasheet	M58BW16F_STMicroelectronics.pdf

M58BW16F Product details

Description

. . . .

Features

Supply voltage.
VDD = 2.7V to 3.6V (45ns) or VDD = 2.5V to 3.3V (55ns).
VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers High performance.
Access times: 45 and 55ns.
Synchronous Burst Reads.
75MHz Effective Zero Wait-State Burst Read.
Asynchronous Page Reads M58BW32F memory organization:.
Eight 64 Kbit small parameter blocks.
Four 128 Kbit large parameter blocks.
Sixty-two 512 Kbit main blocks M58BW16F memory org.

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Published: Feb 25, 2007 |