M58BW16F - (M58BW16F / M58BW32F) Flash memories
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7 1.1 Block Protection .
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13 2 Signal descriptions .
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M58BW16F Features
* Supply voltage
* VDD = 2.7V to 3.6V (45ns) or VDD = 2.5V to 3.3V (55ns)
* VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers High performance
* Access times: 45 and 55ns
* Synchronous Burst Reads
* 75MHz Effective Zero Wait-State Burst Read
* Asynchro
