M58LR128HB - (M58LR128Hx) Flash memories

Product Overview

ST Microelectronics

Part number	M58LR128HB
Manufacturer	STMicroelectronics
File Size	837.18 KB
Description	(M58LR128Hx) Flash memories
Datasheet	M58LR128HB Datasheet
Additional preview pages of the M58LR128HB datasheet.

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Supply voltage.
VDD = 1.7 V to 2.0 V for program, erase and read.
VDDQ = 1.7 V to 2.0 V for I/O Buffers.
VPP = 9 V for fast program Synchronous / Asynchronous Read.
Synchronous Burst Read mode: 54 MHz.
Asynchronous Page Read mode.
Random access: 85 ns Synchronous Burst Read Suspend Programming time.
2.5 µs typical word program time using Buffer Enhanced Factory Program command Memory organization.
Multiple Bank memory.

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Published: Apr 5, 2007 |