M58LR128HT - (M58LR128Hx) Flash memories

Product Overview

ST Microelectronics

Part number	M58LR128HT
Manufacturer	STMicroelectronics
File Size	837.18 KB
Description	(M58LR128Hx) Flash memories
Datasheet	M58LR128HT Datasheet
Note	This datasheet PDF includes multiple part numbers: M58LR128HT, M58LR128HB. Please refer to the document for exact specifications by model.
Additional preview pages of the M58LR128HT datasheet.

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Supply voltage.
VDD = 1.7 V to 2.0 V for program, erase and read.
VDDQ = 1.7 V to 2.0 V for I/O Buffers.
VPP = 9 V for fast program Synchronous / Asynchronous Read.
Synchronous Burst Read mode: 54 MHz.
Asynchronous Page Read mode.
Random access: 85 ns Synchronous Burst Read Suspend Programming time.
2.5 µs typical word program time using Buffer Enhanced Factory Program command Memory organization.
Multiple Bank memory.

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Other Datasheets by ST Microelectronics

M58LR128HB - (M58LR128Hx) Flash memories
M58LR128FB - Flash Memory
M58LR128FT - Flash Memory
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Published: Apr 5, 2007 |