MD2310FX
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High voltage npn power transistor. The MD2310FX is manufactured using planar technology with diffused collector adopting new and enhanced high voltage structure. The MD
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MD2310FX - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot.
MD231G - GSM/GPRS module
(CMT)
MD231G SPECIFICATION
1
Document Name: MD231G specification Version: 01.00 Date : 2012 -08 -08 Status : Draft
General Notes
CMT offers this informatio.
MD2369 - Dual Transistors
(Central Corp)
Dual Transistors TO-78 Case (Continued)
TYPE NO.
DESCRIPTION
MD982
PNP AMPL/SWITCH
MD2219A NPN AMPL/SWITCH
MD2369 NPN SAT SWITCH
MD2369A NPN SA.
MD2369 - DUAL GENERAL PURPOSE TRANSISTOR
(Motorola)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation
@ .
MD2369A - Dual Transistors
(Central Corp)
Dual Transistors TO-78 Case (Continued)
TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) (V) hFE @ IC (mA) @ VCE (V) VCE (SAT ) (V) @ IC (mA) fT (MHz) *.
MD2369A - DUAL GENERAL PURPOSE TRANSISTOR
(Motorola)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation
@ .
MD2369AF - DUAL GENERAL PURPOSE TRANSISTOR
(Motorola)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation
@ .
MD2369AFHXV - NPN Silicon Dual/Quad Small Signal Transistor
(Motorola)
.
MD2369AHX - NPN Silicon Dual/Quad Small Signal Transistor
(Motorola)
.
MD2369B - Dual Transistors
(Central Corp)
Dual Transistors TO-78 Case (Continued)
TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) (V) hFE @ IC (mA) @ VCE (V) VCE (SAT ) (V) @ IC (mA) fT (MHz) *.
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