MD2310FX Datasheet (ST Microelectronics) - High voltage NPN Power transistor

MD2310FX, High voltage NPN Power transistor

The MD2310FX is manufactured using planar technology with diffused collector adopting new and enhanced high voltage structure.

The MD product series show improved silicon efficiency bringing updated performance to the horizontal deflection stage.

3 2 1 TO-3PF Figure 1.

Internal schematic diagram T

MD2310FX Features

* State-of-the-art technology:

* diffused collector “enhanced generation”

* Stable performance versus operating temperature variation

* Low base drive requirement

* Tight hFE range at operating collector current

* Fully insulated power package U.L. compliant Application