MD2009DFX Datasheet - ST Microelectronics

MD2009DFX High voltage NPN Power transistor

The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. RBE=60Ω typ. Order codes Part number MD2009DFX Ma.

MD2009DFX Features

* State-of-the-art technology:

* diffused collector “enhanced generation” More stable performance versus operating temperature variation Low base drive requirement Tighter hFE range at operating collector current Fully insulated power package U.L. com

MD2009DFX_STMicroelectronics.pdf