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P3NB60FP Datasheet - ST Microelectronics

P3NB60FP STP3NB60

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala.

P3NB60FP Datasheet (265.93 KB)

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