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P3NB80 Datasheet - ST Microelectronics

P3NB80 STP3NB80

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptiona.

P3NB80_STMicroelectronics.pdf

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