P9NK60Z Datasheet - ST Microelectronics

P9NK60Z STP9NK60Z

INTERNAL SCHEMATIC DIAGRAM The SuperMESH™ series is obtained through an DataSheet4U.com extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most deman.

www.DataSheet4U.com www.DataSheet4U.com N-CHANNEL 600V - 0.85Ω - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP9NK60Z STP9NK60ZFP STB9NK60Z STB9NK60Z-1 VDSS 600 600 600 600 V V V V RDS(on) < 0.95 < 0.95 < 0.95 < 0.95 ID 7 7 7 7 A A A A Pw 125 W 30 W 125 W 125 W 1 2 STP9NK60Z - STP9NK60ZFP STB9NK60Z - STB9NK60Z-1 Ω Ω Ω Ω 3 s s s s s s s TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY .

P9NK60Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltag

P9NK60Z_STMicroelectronics.pdf