P9NK60ZFP Datasheet - STMicroelectronics

P9NK60ZFP STP9NK60ZFP

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements .

www.DataSheet4U.com N-CHANNEL 600V - 0.85Ω - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP9NK60Z STP9NK60ZFP STB9NK60Z STB9NK60Z-1 VDSS 600 600 600 600 V V V V RDS(on) < 0.95 < 0.95 < 0.95 < 0.95 ID 7 7 7 7 A A A A Pw 125 W 30 W 125 W 125 W 1 2 STP9NK60Z - STP9NK60ZFP STB9NK60Z - STB9NK60Z-1 Ω Ω Ω Ω 3 s s s s s s s TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACIT.

P9NK60ZFP Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltag

P9NK60ZFP_STMicroelectronics.pdf