SGSF324
259.47kb
High voltage fastswitching npn power transistor. The SGSF324 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter struct
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SGS100MA010D1
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE
TYPE
Voss
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Ros(on) 0.014 0
10 120 A
• ISOLATED POWERMO.
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