STB120NF10 Datasheet | STMicroelectronics

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STrip FET process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, highfrequency isolated DC-DC converters for Tele and puter applications. It is also intended for any applications with low gate drive requirements. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s AUDIO AMPLIFIERS s POWER TOOLS Ordering Information SALES TYPE STB120NF10 STP120NF10 MARKING B120NF10 P120NF10 PACKAGE TO-263 TO-220 PACKAGING TAPE & REEL TUBE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(- ) Ptot dv/dt (1) EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 ± 20 120 85 480 312 2.08 10 550 -55 to 175 Unit V V V A A A W W/°C V/ns m J °C (- ) Pulse width limited by safe operating area. May 2003 (1) ISD ≤120A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, T j ≤ TJMAX (2) Starting T j = 25 o C, ID = 60A, VDD = 50V 1/10 STB120NF10 STP120NF10 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 0.48 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 20 V Min. 100 1 10 ±100 Typ. Max. Unit V µA µA n A ON (- ) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250...