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STB90NF03L N-Channel Enhancement Mode MOSFET

STB90NF03L Description

w w w .D a t a Sh N-CHANNEL 30V - 0.0056Ω - 90A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET VDSS 30 V RDS(on) < 0.0065 Ω ID 90 A t e e 4U ..
This application specific Power Mosfet is the third generation of STMicroelectronics unique “Single Feature Size ™” strip-based process.

STB90NF03L Applications

* SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT Tstg Tj w Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (co

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N-Channel Enhancement Mode MOSFET ST Microelectronics
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