STB9NC60 Datasheet - ST Microelectronics

N-Channel Enhancement Mode MOSFET

STB9NC60 General Description

The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron *area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIG.

STB9NC60 Datasheet (185.46 KB)

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STB9NC60

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STMicroelectronics ↗

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185.46 KB

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N-channel enhancement mode mosfet.
w w at .D w aS e e h U 4 t m o .c N-CHANNEL 600V - 0.6Ω - 9A - D2PAK/I2PAK PowerMesh™ II MOSFET RDS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 9.0 A STB9NC.

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STB9NC60 General Description

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