STC03DE170HV Datasheet, Esbt, ST Microelectronics

STC03DE170HV Features

• Esbt VCS(ON) 1V n n n n Figure 1: Package RCS(ON) 0.55 W IC 1.8 A LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz SQUARED RBSOA, UP TO 1700 V VERY LOW CISS DRIVEN BY RG = 4.7

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STC03DE170HV

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STMicroelectronics ↗

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📄 Datasheet

Description:

Hybrid emitter switched bipolar transistor esbt. The STC03DE170HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aim

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STC03DE170HV

ST Microelectronics

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