Datasheet Details
- Part number
- STC04IE170HV
- Manufacturer
- STMicroelectronics ↗
- File Size
- 218.85 KB
- Datasheet
- STC04IE170HV_STMicroelectronics.pdf
- Description
- Emitter Switched Bipolar Transistor
STC04IE170HV Description
STC04IE170HV Monolithic emitter switched bipolar transistor ESBT® 1700 V - 4 A - 0.17 Ω .
The STC04IE170HV is manufactured in monolithic ESBT technology, aimed at providing the best performance in high frequency / high voltage applications.
STC04IE170HV Features
* VCS(ON) IC RCS(ON)
0.7 V
4 A 0.17 Ω
* High voltage / high current cascode configuration
* Low equivalent ON resistance
* Very fast-switch: up to 150 kHz
* Squared RBSOA: up to 1700 V
* Very low CISS driven by RG = 47 Ω
STC04IE170HV Applications
* It is designed for use in gate driven based topologies. 1 234
TO247-4L HV
Figure 1. Internal schematic diagrams
Table 1. Device summary
Order code
Marking
STC04IE170HV
C04IE170HV
Package TO247-4L HV
June 2009
Doc ID 12676 Rev 3
Packing Tube
1/9
www. st. com
9
Electrical ratings
1 Electri
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