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STC04IE170HV Datasheet - ST Microelectronics

STC04IE170HV Emitter Switched Bipolar Transistor

The STC04IE170HV is manufactured in monolithic ESBT technology, aimed at providing the best performance in high frequency / high voltage applications. It is designed for use in gate driven based topologies. 1 234 TO247-4L HV Figure 1. Internal schematic diagrams Table 1. Device summary Order code.

STC04IE170HV Features

* VCS(ON) IC RCS(ON) 0.7 V 4 A 0.17 Ω

* High voltage / high current cascode configuration

* Low equivalent ON resistance

* Very fast-switch: up to 150 kHz

* Squared RBSOA: up to 1700 V

* Very low CISS driven by RG = 47 Ω

* Very low turn-off cross over time Application

STC04IE170HV_STMicroelectronics.pdf

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Datasheet Details

Part number:

STC04IE170HV

Manufacturer:

STMicroelectronics ↗

File Size:

218.85 KB

Description:

Emitter switched bipolar transistor.

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STC04IE170HV STC04IE170HV Emitter Switched Bipolar Transistor ST Microelectronics

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