STC04IE170HV - Emitter Switched Bipolar Transistor
The STC04IE170HV is manufactured in monolithic ESBT technology, aimed at providing the best performance in high frequency / high voltage applications.
It is designed for use in gate driven based topologies.
1 234 TO247-4L HV Figure 1.
Internal schematic diagrams Table 1.
Device summary Order code
STC04IE170HV Features
* VCS(ON) IC RCS(ON) 0.7 V 4 A 0.17 Ω
* High voltage / high current cascode configuration
* Low equivalent ON resistance
* Very fast-switch: up to 150 kHz
* Squared RBSOA: up to 1700 V
* Very low CISS driven by RG = 47 Ω
* Very low turn-off cross over time Application
