STC04IE170HV Emitter Switched Bipolar Transistor

ST Microelectronics

Description

STC04IE170HV Monolithic emitter switched bipolar transistor ESBT® 1700 V - 4 A - 0.17 Ω .
The STC04IE170HV is manufactured in monolithic ESBT technology, aimed at providing the best performance in high frequency / high voltage applications.

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Datasheet Specifications

Part number: STC04IE170HV
Manufacturer: STMicroelectronics ↗
File Size: 218.85 KB
Datasheet: STC04IE170HV_STMicroelectronics.pdf
Description: Emitter Switched Bipolar Transistor

Features

* VCS(ON) IC RCS(ON) 0.7 V 4 A 0.17 Ω
* High voltage / high current cascode configuration
* Low equivalent ON resistance
* Very fast-switch: up to 150 kHz
* Squared RBSOA: up to 1700 V
* Very low CISS driven by RG = 47 Ω

Applications

* It is designed for use in gate driven based topologies. 1 234 TO247-4L HV Figure 1. Internal schematic diagrams Table 1. Device summary Order code Marking STC04IE170HV C04IE170HV Package TO247-4L HV June 2009 Doc ID 12676 Rev 3 Packing Tube 1/9 www. st. com 9 Electrical ratings 1 Electri

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STC04IE170HV Emitter Switched Bipolar Transistor ST Microelectronics

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