STC08IE120HV Datasheet (ST Microelectronics) - Emitter Switched Bipolar Transistor

STC08IE120HV, Emitter Switched Bipolar Transistor

The STC08IE120HV is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.

It is designed for use in Gate Driven based topologies.

Order codes Part Number STC08IE120HV Marking C08IE120HV Package TO247-4L HV Packaging Tube Janua

STC08IE120HV Features

* VCS(ON) 0.8 V

* IC 8A RCS(ON) 0.10 W High voltage / high current Cascode configuration Low equivalent on resistance very fast-switch up to 150 kHz Squared RBSOA up to 1200V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time

* 1 23 4 TO247-4L HV