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STC08IE120HV Emitter Switched Bipolar Transistor

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Description

www.DataSheet4U.com STC08IE120HV Emitter Switched Bipolar Transistor ESBT® 1200 V - 8 A - 0.10 Ω General .
The STC08IE120HV is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.

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Features

* VCS(ON) 0.8 V
* IC 8A RCS(ON) 0.10 W High voltage / high current Cascode configuration Low equivalent on resistance very fast-switch up to 150 kHz Squared RBSOA up to 1200V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time
* 1 23 4 TO247-4L HV

STC08IE120HV Distributors

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